Mosfet AON6970 AO6970 6970FET CHIP IC For control power Regulator Buy From Sparesale.com Direct Importer And Distributor in india. This TI component is an integrated driver-MOSFET (DrMOS) that was first used on AMD’s Radeon HD 6800 Series. This leads to a delay in HD 6970 card manufacturing, with partners receiving their final boards late as well. It is interesting to note that AMD has. The Radeon HD 6970 uses eight 2 Gbit GDDR5 chips, making its 2 GB video memory (2 Gbit x 8 = 2 GB). Each chip is connected to the GPU using a 32-bit data lane, making the video card’s 256-bit. MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 48 A Features. Parivaar mithun mp3 songs free download. Low RDS(on) to Minimize Conduction Losses. Low Capacitance to Minimize Driver Losses. Optimized Gate Charge to Minimize Switching Losses. Optimized for 5 V, 12 V Gate Drives. These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications.
Type Designator: AON6978
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 31(33) W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20(12) V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.2 V
Maximum Drain Current |Id|: 28(36) A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 3.2(4) nS
6970 Mosfet Motor
Drain-Source Capacitance (Cd): 474(513) pF
Maximum Drain-Source On-State Resistance (Rds): 0.0057(0.0038) Ohm
Package: DFN5X6B
AON6978 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AON6978 Datasheet (PDF)
0.1. aon6978.pdf Size:476K _aosemi
AON697830V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) on Low-SideVDS 30V 30V Very Low RDS(on) at 4.5V VGS ID (at VGS=10V) 28A 36A Low Gate Charge RDS(ON) (at VGS=10V)
8.1. aon6973a.pdf Size:482K _aosemi
AON6973A30V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) on Low-SideVDS 30V 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 28A 32A Low Gate Charge RDS(ON) (at VGS=10V)
8.2. aon6970.pdf Size:529K _aosemi
AON697030V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 58A 85A High Current Capability RDS(ON) (at VGS=10V)
8.3. aon6974.pdf Size:648K _aosemi
AON697430V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) on Low-SideVDS 30V 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 28A 36A Low Gate Charge RDS(ON) (at VGS=10V)
8.4. aon6974a.pdf Size:482K _aosemi
AON6974A30V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) on Low-SideVDS 30V 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 28A 32A Low Gate Charge RDS(ON) (at VGS=10V) Ffxiv launcher not working.
Datasheet: AON6932A, AON6934A, AON6936, AON6938, AON6946, AON6970, AON6973A, AON6974A, IRF640, AON6980, AON7200, AON7210, AON7220, AON7240, AON7242, AON7244, AON7246. Chest patch lineage 2 c4.
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MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02
FDD16AN08_F085 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDD16AN08_F085
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 135 W
Предельно допустимое напряжение сток-исток |Uds|: 75 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Максимально допустимый постоянный ток стока |Id|: 50 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 31 nC
Сопротивление сток-исток открытого транзистора (Rds): 0.016 Ohm
Тип корпуса: TO252
FDD16AN08_F085 Datasheet (PDF)
0.1. fdd16an08a0 f085 fdd16an08 f085.pdf Size:2944K _fairchild_semi
October 2008FDD16AN08A0_F085N-Channel UltraFET Trench MOSFET75V, 50A, 16mFeatures Applications rDS(ON) = 13m (Typ.), VGS = 10V, ID = 50A 42V Automotive Load Control Qg(tot) = 31nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode Electronic Valve Train Systems UIS Capabil
5.1. fdd16an08a0.pdf Size:242K _fairchild_semi
May 2002FDD16AN08A0N-Channel UltraFET Trench MOSFET75V, 50A, 16mFeatures Applications rDS(ON) = 13m (Typ.), VGS = 10V, ID = 50A 42V Automotive Load Control Qg(tot) = 31nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode Electronic Valve Train Systems UIS Capability (Sing
5.2. fdd16an08a0 nf054.pdf Size:239K _fairchild_semi
May 2002FDD16AN08A0N-Channel UltraFET Trench MOSFET75V, 50A, 16mFeatures Applications rDS(ON) = 13m (Typ.), VGS = 10V, ID = 50A 42V Automotive Load Control Qg(tot) = 31nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode Electronic Valve Train Systems UIS Capability (Sing
Другие MOSFET.. FDH50N50, FQPF6N90C, FQPF70N10, FDH45N50F, FQPF7N60, FDN5632N_F085, FQPF7N65C, FQPF7N80C, BUZ10, FQPF7P20, FQPF85N06, FQPF8N60C, FDD24AN06L_F085, FQPF8N60CF, FDMS7680, FQPF8N80C, FQD5N15.
Список транзисторов
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6970 Mosfet Pdf
MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N026970 Mosfet Wiring